IGBTs
原廠：美格納半導體 (Magnachip)
Discrete 650V / Discrete 1200V / Chip 1200V
Discrete 650V / Discrete 1200V / Chip 1200V
Discrete IGBTs
650V
| Product | Vces [V] | Ic [A] 100°C | Vce(sat) [V] | Switching Energy [mJ] | Short circuit [μs] | Option | Package | Datasheet | |
|---|---|---|---|---|---|---|---|---|---|
| Eon | Eoff | ||||||||
| MBQ50T65FESCTH | 650 | 50 | 1.95 | 1.40 | 0.37 | 5 | Diode Co-Pack | TO-247 |
|
| MBQ60T65PESTH | 650 | 60 | 1.90 | 0.92 | 0.53 | 5 | Diode Co-Pack | TO-247 |
|
| MBF15T65PEHTH | 650 | 15 | 1.65 | 0.26 | 0.14 | 5 | Diode Co-Pack | TO-220FB |
|
| MBQ40T65QESTH | 650 | 40 | 1.80 | 0.50 | 0.40 | - | Diode Co-Pack | TO-247 |
|
SSCFETTM
1200V
| Product | Vces [V] | Ic [A] 100°C | Vce(sat) [V] | Switching Energy [mJ] | Short circuit [μs] | Option | Package | Datasheet | |
|---|---|---|---|---|---|---|---|---|---|
| Eon | Eoff | ||||||||
| MBQ40T120QESTH | 1200 | 40 | 2.00 | 1.96 | 0.54 | 3 | Diode Co-Pack | TO-247 |
|
| MBQ25T120FESCTH | 1200 | 25 | 2.00 | 1.44 | 0.55 | 10 | Diode Co-Pack | TO-247 |
|
| MBQ40T120FESTH | 1200 | 40 | 2.00 | 1.96 | 0.54 | 10 | Diode Co-Pack | TO-247 |
|
SSCFETTM
IGBT Chip for Standard Module
1200V
| Product Family | Product | Vces [V] | Ic [A] 100°C | Vce(sat) [V] | RBSOA | SCSOA [μs] | Switching Energy [mJ] | Option | Package | Datasheet | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Eon | Eoff | ||||||||||
| 1200V | MBW75T120PS | 1200 | 75 | 2.10 | - | 10 | - | - | Internal Rg=7.5Ω | Sawn on foil |
|
| 1200V | MBW100T120PSF | 1200 | 100 | 2.10 | - | 10 | - | - | Internal Rg=5.0Ω | Sawn on foil |
|
| 1200V | MBW100T120PHF | 1200 | 100 | 1.70 | - | 10 | - | - | Internal Rg=5.0Ω | Sawn on foil |
|
| 1200V | MBW50T120PHF | 1200 | 50 | 1.85 | - | 10 | - | - | Internal Rg=4.0Ω | Sawn on foil |
|
* Reference by IGBT Standard Module
SSCFETTM
